TY - JOUR AU - Kammeugne, Romeo Kom AU - Leroux, Charles AU - Frutuoso, Tadeu Mota AU - Cluzel, Jacques AU - Vauche, Laura AU - Gwoziecki, Romain AU - Garros, Xavier AU - Charles, Matthew AU - Bano, Edwige AU - Ghibaudo, Gerard PY - 2022/10/18 Y2 - 2024/03/28 TI - In Depth Parasitic Capacitance Analysis on GaN-HEMTs with Recessed MIS Gate JF - Journal of Electronics and Electrical Engineering JA - J. Electron. Electric. Eng. VL - 1 IS - 1 SE - Articles DO - 10.37256/jeee.1120221684 UR - https://ojs.wiserpub.com/index.php/JEEE/article/view/1684 SP - 3 AB - <p>In this study, parasitic coupling capacitance behavior on GaN devices with recessed MIS-gate is analysed in depth by combining experimental data, 2D-simulations, analytical calculations, and TEM imaging. This enabled to highlight the second channel formation. A new analytical model to determine the contribution of the active channel and the different coupling parasitic capacitances from a gate-to-channel capacitance <em>C</em><sub>gc</sub> curve of a GaN MIS-HEMT is proposed. This also enables the evaluation of the respective contribu-tions of all components such as the passivation layer and gate field plate capacitances in the parasitic ca-pacitance and effective gate length evaluation of GaN devices with recessed MIS gate, which could be useful for reliable parameter extraction, device modeling and optimization.</p> ER -