KAMMEUGNE, R. K.; LEROUX, C. .; THEODOROU, C.; VAUCHE, L.; CHARLES, M.; BANO, E.; GHIBAUDO, G. . On-Wafer Drain Current Variability in GaN MIS-HEMT on 200-mm Silicon Substrates. Journal of Electronics and Electrical Engineering, Singapore, v. 2, n. 1, p. 12–23, 2023. DOI: 10.37256/jeee.2120232132. Disponível em: https://ojs.wiserpub.com/index.php/JEEE/article/view/2132. Acesso em: 8 jul. 2024.