KAMMEUGNE, R. K.; LEROUX, C.; FRUTUOSO, T. M.; CLUZEL, J.; VAUCHE, L.; GWOZIECKI, R.; GARROS, X.; CHARLES, M.; BANO, E.; GHIBAUDO, G. . In Depth Parasitic Capacitance Analysis on GaN-HEMTs with Recessed MIS Gate. Journal of Electronics and Electrical Engineering, Singapore, v. 1, n. 1, p. 3, 2022. DOI: 10.37256/jeee.1120221684. Disponível em: https://ojs.wiserpub.com/index.php/JEEE/article/view/1684. Acesso em: 15 jul. 2024.