GHIBAUDO, G. .; BALESTRA, F. Numerical Simulation of Electro-Thermal Properties in FDSOI MOSFETs Down to Deep Cryogenic Temperatures. Journal of Electronics and Electrical Engineering, Singapore, v. 2, n. 1, p. 24–43, 2023. DOI: 10.37256/jeee.2120232498. Disponível em: https://ojs.wiserpub.com/index.php/JEEE/article/view/2498. Acesso em: 18 may. 2024.