Kammeugne RK, Leroux C, Theodorou C, Vauche L, Charles M, Bano E, Ghibaudo G. On-Wafer Drain Current Variability in GaN MIS-HEMT on 200-mm Silicon Substrates. J. Electron. Electric. Eng. [Internet]. 2023 Jan. 20 [cited 2024 Nov. 25];2(1):12–23. Available from: https://ojs.wiserpub.com/index.php/JEEE/article/view/2132