Recent Advances of IGO-Based Thin-Film Transistors: A Review

ZhaoYang Li; Chengyu Shen; Die Luo; Jinyang Zheng; Xihao Wang; Meilin Yu; Liting Liu; Hao Huang

doi:10.37256/jeee.52202610227

Authors

ZhaoYang Li Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China
Chengyu Shen Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China
Die Luo Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China
Jinyang Zheng Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China
Xihao Wang Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China
Meilin Yu Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China
Liting Liu Center on Nanoenergy Research, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University, Nanning, 530004, China
Hao Huang 1. Guangxi Key Laboratory of Processing for Non-ferrous Metals and Featured Materials, School of Resources, Environment and Materials, Guangxi University, Nanning, 530004, China; 2. MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and Materials, Guangxi University, Nanning, 530004, China https://orcid.org/0000-0003-4416-5459

DOI:

https://doi.org/10.37256/jeee.52202610227

Keywords:

thin film transistor, Indium Gallium Oxide (IGO), performance

Abstract

Indium Gallium Oxide (IGO) Thin-Film Transistors (TFTs) are recognized as potential candidates to overcome current performance barriers and serve as a novel driving force for the next generation of commercial display technologies. Herein, we undertake a comprehensive overview of the performance optimization strategies for IGO-based TFTs. This review begins with a concise overview of the current landscape and prevailing challenges in TFTs. Then, it examines efforts to enhance the performance of IGO-based TFTs, with a particular focus on advances in active layer optimization, gate dielectric engineering, contact engineering, interface engineering, and device structure optimization. This review aims to provide a comprehensive resource for researchers working on IGO-based TFTs and related fields.

Recent Advances of IGO-Based Thin-Film Transistors: A Review

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