Journal of Electronics and Electrical Engineering
ISSN: (Print) 2972-3280 (Online) DescriptionJournal of Electronics and Electrical Engineering (JEEE, ISSN: 2972-3280) is an international, peer-reviewed, open access journal, published biannually online by Universal Wiser Publisher (UWP). The Journal is aimed to provide a digital forum for researchers and experts to publish new ideas and review papers that reflect on experience and future challenges for electronics and sustainable electrical engineering.
> fully open access - free for readers
> no article processing charge (APC) paid by authors or their institutions until 2025
> thorough double-blind peer-review
> free post-publication promotion service by the Editorial Office
Announcement
Jun 21,2022
Professor Ahmed Abu-Siada Appointed Founding Editor-in-Chief for JEEE
Jun 02,2022Call for Papers
Information
Latest Articles
Open Access Article
Sustainability and Prolonging Rechargeable Battery Life: A Sensor Device Review
by Swati Sahu, Sanjay Tiwari
ABSTRACT: Rechargeable batteries have recently experienced increases in productivity and the economy, solidifying their dominance in energy-intensive cultures. Regular performance monitoring is required to...
Open Access Article
Open-Source Data Processing Chain for Marche Region X-band Weather Radar
by Francesco Iocca, Marco Lazzeri, Marco Pellegrini
ABSTRACT: In the framework of three projects co-funded by the European Union (EU), an X-band (8-12 GHz frequency range) polarimetric radar was installed in the Marche Region territory (East-Central Italy)...
Open Access Article
Numerical Simulation of Electro-Thermal Properties in FDSOI MOSFETs Down to Deep Cryogenic Temperatures
by Gerard Ghibaudo, Francis Balestra
ABSTRACT: An original reformulation of the thermopower S , heat conductivity K and heat capacitance C in bulk silicon for electrons and phonons is first proposed. Closed-form analytical approximations...
Open Access Article
On-Wafer Drain Current Variability in GaN MIS-HEMT on 200-mm Silicon Substrates
by Romeo Kom Kammeugne, Charles Leroux, Christoforos Theodorou, Laura Vauche, Matthew Charles, Edwige Bano, Gerard Ghibaudo
ABSTRACT: In this study, a detailed on-wafer (or global) variability analysis of drain current characteristics of GaN MIS-HEMT devices grown on 200 mm silicon substrate is conducted. For the first time to...
Open Access Article
More Than a Device: Function Implementation in a Multi-Gate Junctionless FET Structure
by Sehtab Hossain, Md Arif Iqbal, Prerana Samant, Mahbube K. Siddiki, Mostafizur Rahman
ABSTRACT: The miniaturization of the transistor sizes to keep up with Moore's Law in Integrated Circuits (ICs) is rapidly approaching the physical limits. To push the horizons of Moore's Law, among the...