by Romeo Kom Kammeugne, Charles Leroux, Christoforos Theodorou, Laura Vauche, Matthew Charles, Edwige Bano, Gerard Ghibaudo
ABSTRACT: In this study, a detailed on-wafer (or global) variability analysis of drain current characteristics of GaN MIS-HEMT devices grown on 200 mm silicon substrate is conducted. For the first time to...
by Sehtab Hossain, Md Arif Iqbal, Prerana Samant, Mahbube K. Siddiki, Mostafizur Rahman
ABSTRACT: The miniaturization of the transistor sizes to keep up with Moore's Law in Integrated Circuits (ICs) is rapidly approaching the physical limits. To push the horizons of Moore's Law, among the...