Performance Optimization of Carbon Nano-Tube Field Effect Transistors by Tuning Parameters

Authors

  • Kriti Rai Saini Department of Electrical and Computer Engineering, California State University, Fullerton, CA, USA
  • Shailesh Rajput Department of Electrical and Computer Engineering, California State University, Fullerton, CA, USA
  • Yoonsuk Choi Department of Electrical and Computer Engineering, California State University, Fullerton, CA, USA

DOI:

https://doi.org/10.37256/jeee01010005

Keywords:

CNTFET, PDP, physical parameter tuning

Abstract

As transistors are scaled down to keep up with Moore's law, the semiconductor industry is facing several challenges due to the limitation of traditional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) technology. To overcome this issue of scalability, various other technologies are being researched. Among them are Carbon Nano-Tube Field Effect Transistors (CNTFET), Ribbon Field Effect Transistors (RibbonFET), Graphene Nanoribbon Field Effect Transistor (GNRFET), and Fin shaped Field Effect Transistor (FinFET), which can substitute MOSFETs. Due to carbon nanotubes' excellent conductivity supremacy, CNTFETs are a promising new solution. However, implementing a CNTFET and making circuits from it is still challenging as CNTFETs can exhibit properties of both semiconductor and metal depending on various parameters. This paper will illustrate the characteristics of the CNTFET, compare the power consumption and propagation delay of basic logic gates made using the CNTFET and MOSFET technology. The parameter tuning is done by measuring the power and delay for all parameter values. The Simulation of CNTFET is done on the Stanford CNTFET model using H-Spice.

Downloads

Published

2022-10-27

How to Cite

(1)
Saini, K. R.; Rajput, S.; Choi, Y. Performance Optimization of Carbon Nano-Tube Field Effect Transistors by Tuning Parameters. J. Electron. Electric. Eng. 2022, 1, 5.